Research on a new process is described which utilized a laser to achieve controlled crystallization of amorphous Si thinfilms for photovoltaic applications. Amorphous Si films are deposited on suitable substrates using RF sputtering. A laser is used to inoculate these films with crystalline embryos at specific locations. These embryos should then grow in a controlled atmosphere annealing furnace under conditions optimized to maintain the nucleation rate at zero and the transformation rate (from amorphous to crystalline silicon) at a maximum value. The result will be a polycrystalline silicon film with a large grain size to film thickness ratio, where the ultimate grain size will be determined by the laser inoculation spacing.